Coulomb blockade-like transport and enhanced memory in organic transistors embedded with sub-nm Pt nanoparticles for neuromorphic computing

Organic transistors are playing an increasingly important role for neuromorphic applications. However, devices that rely solely on ferroelectric switching or on interface traps for their multi-conductance states exhibit limited memory windows. Here, we introduce an ultrathin oxide layer with a uniform distribution of sub-nm platinum nanoparticles (PtNPs) at the interface of a polymer semiconducting and a ferroelectric dielectric in a thin film transistor architecture. The interfacial stack, Al$_2$O$_3$/PtNP/Al$_2$O$_3$, provides a viable route for localized charge trapping and de-trapping in a region where it can most effectively influence the channel conductance. The organic transistors display a large memory window (> 20 V) in their current-voltage characteristics. The sub-nm PtNPs give rise to features that are consistent with room temperature Coulomb blockade-like transport, supporting discrete and well-separated levels within the memory window. The devices support multimodal programming using electrical and optical stimuli with both long-term plasticity and enhanced short-term plasticity (STP) phenomena. These results open new directions for implementing STP in the development of neuromorphic computing.