Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift
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Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift
The bottom-gate JFET holds its threshold voltage to within 0.1V at 400°C.
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