Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.)

Researchers from Peking University, Chinese Academy of Sciences et al. published a technical paper titled “Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.” Abstract Excerpt: The paper presents a “homo-metal-element (W/Mo and Al) surface modification strategy of commercial C/M sapphire” and demonstrates “2-inch scale monolayer WS2 or MoS2 single-crystal... » read more