Molecular Dynamics Study Explains Aluminum Dopant Activation In 4H-SiC (TU Wien, Silvaco)

Researchers from TU Wien and Silvaco Europe published a technical paper titled “The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers.” Abstract Excerpt: “The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed but its atomistic... » read more