Impact of Cu Microstructure On The TSV-Induced Residual Stress Within Silicon (Purdue, UCLA)

Researchers at Purdue University and the UCLA published a technical paper titled “Experimental Evidence for the Impact of Copper Microstructure on Residual Stress of Through Silicon Via.” Abstract Excerpt: “Here, we experimentally quantify the impact of Cu microstructure on the TSV-induced residual stress within silicon. A 3-⁢m-diameter TSV array was annealed at 400 °C for... » read more