Characterization of HBM Power Consumption (ETH Zurich, NYU)

Researchers at ETH Zürich and New York University published a technical paper titled “Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips.” Abstract Excerpt: “We perform the first comprehensive experimental characterization of power consumed by real HBM2 DRAM chips. Our extensive characterization yields 1) the empirical... » read more