Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

Researchers at the UC Berkeley, Samsung Electronics, and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.” Abstract Excerpt: “The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention,... » read more